Dr. Vijay Mishra, PhD
An Organization in Progress !
Publications
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Introductory Training Course on Nanofabrication Technologies 15th January , 2019 CeNSE
Under International Scientific and
Technological Program (I-STEP)
Supported by the Ministry of External
Affairs GoI
Technology and Product Development Policy @ CeNSE
Invited Talks/Presentations
Science Technology and Innovation Policy: 13-20 Nov 2018, CeNSE, IISc
Publication year: 2018
Study of Microheater for Nano Technology based Solid State Gas Sensors
M.Tech/B.Tech Project Reports
Publication year: 2018
Studies on reducing leakage current and improving breakdown voltage of large-area silicon detectors
Journal paper
Nuclear Instruments and Methods in Physics Research A 527 (2004) 308–318
Publication year: 2018
Abstract
6×6 cm2 single-sided p+–i–n+ silicon strip detectors have been fabricated with the standard IC fabrication planar technology. Various processing techniques have been used to reduce the leakage current of the detectors and their results are presented. Different gettering processes have been implemented to remove the impurities and defects from the detector active regions. The combined approach of employing intrinsic as well as extrinsic gettering gives the best result. Incorporating special design techniques and unique back plane ohmic side processing technology has ensured stable high-voltage operation of detectors without breakdown. The special design and processing techniques have produced detectors with typical reverse bias current densities of approximately 2 nA cm−2 at VFD+150 V and breakdown voltage greater than 500 V. These technological studies have been carried out for producing silicon detectors to be mounted in Preshower detector of CMS experiment at CERN.
State-of-the-Art 6” Wafer MtM Fab for Sensor Technologies
Invited Talks/Presentations
Publications Publications 100% 10 Unilever, Mumbai, India Screen reader support enabled. Unilever, Mumbai, India
Publication year: 2018
State-of-the-Art 6” Wafer MtM Fab for Sensor Technologies
State-of-the-Art 6” Wafer MtM Fab for Sensor Technologies
Invited Talks/Presentations
Micro Systems Packaging and Characterization Workshop CMTI 23rd March, 2018
Publication year: 2018
Sensors to Systems ( for Air Quality Monitoring Devices)
Invited Talks/Presentations
DRDO Patron Member Program_CeNSE_Debel_31 May2018
Publication year: 2018
Sensors to Systems Prototype making at CeNSE
Invited Talks/Presentations
INUP Familiarization Workshop 11th September , 2018 CeNSE
Publication year: 2018
Sensors to Systems Prototype making at CeNSE
Invited Talks/Presentations
INUP Familiarization Workshop at Central University of Gujrat 25th October , 2018
Publication year: 2018
Sensors to Systems Prototype making at CeNSE
Invited Talks/Presentations
National Symposium on Nano Science and Technology, 22nd June, 2018 CeNSE
Publication year: 2018
Sensors @ CeNSE
Sensor Technologies for control systems
Invited Talks/Presentations
IIT Kanpur -International conference on control systems_jan 4-6 2018
Publication year: 2018
Sensor Advancements for IoT
Semiconductor ΔE-E detector chip with Low output capacitance
Abstract:
An optically intelligent image sensing device is provided. By applying different potentials across different elec trode sections in the image sensing device, the electric field profiles of the corresponding liquid crystal layer sections bend the lights passing through the liquid crystal layer sections in a predetermined manner. In one embodiment, all of a certain color light entering the image sensing device can be bent towards a color filter for the specific color, thereby entering the light sensor for the specific color light. Accordingly, the optically intelligent image sensing device has improved optical efficiency. An arrangement for an array of different electrode and light sensing sections in the image sensing device is also provided as an example for how each electrode may be connected to the optically intelligent image sensing device control signals. An example using the present optically intelligent image sensing device to improve the optical efficiency of an image capturing device is also described.
Development and Application of New Sensor Technologies
Advancements in Sensors Systems
A solid state neutron detecting device with boron linked polymers as converting material
Abstract:
The invention relates to a gas sensor for detecting a gas component. The gas sensor comprises a sensing layer, a first and a second electrode and a heating element. The sensing layer comprises 20-95 wt.% tungsten oxide and 5-80 wt.% elemental tungsten. 0 0 The combination of tungsten oxide and elemental tungsten constitutes at least 60 wt.% of the sensing layer. The invention further relates to a method of manufacturing a gas sensor comprising the step of depositing the sensing layer by physical vapour deposition.
Vehicular Emission Monitoring System (VEMS)
Conference paperInternational
Published in National seminar on climate change: Challenges and solutions, January 23, 2017 held at Environmental Management and Policy Research Institute (EMPRI)
Publication year: 2017
State-of-the-Art 6” Wafer MtM Fab for Sensor Technologies
Invited Talks/Presentations
Seminar on RF Characterization and activities at CeNSE 29th Aug 2017
Publication year: 2017
MNCF:Your One Source for Materials, Device Characterization and Analysis
Materials and device characterization technology at Nanoscale
Manufacturing of Low Cost Air Quality Monitoring Devices for Smart Cities
Invited Talks/Presentations
IEEE Workshop on Enabling Green Cities, 13 October 2017, Le Méridien, Bangalore
Publication year: 2017
Design and implementation of Electromyography Circuit
M.Tech/B.Tech Project Reports
Publication year: 2017
CeNSE An Indian Ecosystem for Indigenization of Advanced Sensor Technologies
Invited Talks/Presentations
World Quality Day 10th Nov 2017 Satish Dhawan Space Centre, ISRO
Publication year: 2017
Systems Engineering around Nano Tech Sensors at CeNSE
Conference paperInternational
Published in The 10th APCOSEC, the annual international conference of the Asia-Pacific Council on Systems Engineering, held in Bangalore, India between 9th and 11th of November, 2016.
Publication year: 2016
Suspended Aerosol Paticulate Matter Counter
Journal paper
published in International Journal of Advanced Research in Computer and Communication Engineering (IJARCCE), VOLUME 5, ISSUE 9 SEP 2016
Publication year: 2016
Abstract:
A complicated blend of solid and liquid particles result in Particulate Matter particles. These particles are to be monitored and regulated for various reasons, and human health being one of them.This paper discusses about the monitoring of particulate matter particles (aerodynamic in nature) in the range of 2.5 µm to 10 µm. Here, a new technique is proposed for counting of particulate mattersusing optical analyser. Optical method uses light blocking or scattering property, where the flow of Aerosol particles causes illumination. Their interaction with electromagnetic waves causes change in light scattering which is detected by the Photodiode. An effort is put to achieve maximum optimization in terms of technology and cost. The main focus of this project is to implement a design which counts the number of particles and determines thesize of theparticlesthat are less than 2.5 µm (course fine particle) to 10 µm (total suspended particle).
Keywords: Particulate Matter, Python IDE, Microcontroller, NX SIEMENS
Sensors in IoT
Invited Talks/Presentations
IoT, IIoT and Industries 4.0, 18-19 Nov 2016, Hotel Chancery, Lavelle Road, Bangalore
Publication year: 2016
Sensors for Air Quality Monitoring
Invited Talks/Presentations
IoT systems and solutions for Smart City_CDAC_Bangalore _20 Feb 2016
Publication year: 2016
Remote environmental monitoring System
Conference paperInternational
Published in International Journal of Engineering Research in Electronics and Communication Engineering (IJERECE) IF-3.689
Publication year: 2016
Real TIme Measurement of Carbon Dioxide Levels at the Periphery of the Indian Institute of Science (IISc) Campus, Bengaluru
Nanotech Sensors For Human Body Health Monitoring
Invited Talks/Presentations
India Electronics Week, 11-13 Jan 2016, Bangalore
Publication year: 2016
NANOTECH SENSORS FOR HUMAN BODY HEALTH MONITORING
Conference paperInternational
Published in proceedings of India Electronics Week, 2016 held at Bangalore
Publication year: 2016
Nano-tech Sensors For IoT in Health Care and Smart City Applications
Invited Talks/Presentations
Global IoT Conclave, The Chancery Pavilion, Bangalore
Publication year: 2016
Miniaturized Gas Sensing Chamber for Automobile Exhaust
Conference paperInternational
http://isete.org/2016Conference/Kolhapur/ICRIEECICME/
Publication year: 2016
Miniaturized Gas Sensing Assembly for Automobile Exhaust
Abstract
Vehicle emissions are composed of a plethora of toxic, non-toxic and greenhouse gases. These consist of Nitrogen Oxides (NOx), Sulphur Oxides (SOx), Carbon Monoxide (CO) and Carbon Dioxide (CO2) and other Hydrocarbons (HCs). The detection and analysis of these gases is vital in the fight against climate change. With the advent of MEMS technology, solid state sensors have become more and more common in sensor modules used to detect various gases. These sensors used to detect the aforementioned gases are highly delicate and must be placed in protected, safe and suitable environments to perform accurately. This mechanical investigation has lead into the designing and analysis of a miniaturised chamber that is mounted in proximity to the exhaust gases emanating from the tail pipes of automobiles. The chamber protects the sensors from high temperatures, humidity, prevents back pressure or back flow and allows the sensors a sampling time, all while being economical, compact and easy to use. Data from the sensors may be used to actively monitor emissions from the internal combustion engines and hence allow authorities to take off the roads, vehicles that do not meet the emission standards if they exceed them or send the vehicle for servicing. This would mean an overall improvement in the environmental quality of automobiles on the roads.
Keywords: Automobile exhaust; Exhaust gases; Sampling chamber; Solid state sensor
MINIATURIZED GAS SENSING ASSEMBLY FOR AUTOMOBILE EXHAUST
Journal paper
International Journal of Advances in Science Engineering and Technology, ISSN: 2321-9009, Vol-4, Iss-3, Spl. Issue-2 Sep.-2016
Publication year: 2016
Abstract
Vehicle emissions are composed of a plethora of toxic, non-toxic and greenhouse gases. These consist of Nitrogen Oxides (NOx), Sulphur Oxides (SOx), Carbon Monoxide (CO) and carbon dioxide (CO2). The detection and analysis of these gases is vital in the fight against climate change. With the advent of MEMS technology, solid state sensors have become more and more common in sensor modules used to detect various gases. These sensors used to detect the aforementioned gases are highly delicate and must be placed in protected, safe and suitable environments to perform accurately. This mechanical investigation has lead into the designing and analysis of a miniaturised chamber that is mounted in proximity to the exhaust gases emanating from the tail pipes of automobiles. The chamber protects the sensors from high temperatures, humidity, prevents back pressure or back flow and allows the sensors a sampling time, all while being economical, compact and easy to use. Data from the sensors may be used to actively monitor emissions from the internal combustion engines and hence allow authorities to take off the roads, vehicles that do not meet the emission standards if they exceed them or send the vehicle for servicing. This would mean an overall improvement in the quality of automobiles.
Keywords— Automobile Exhaust, Exhaust Gases, Sampling Chamber, Solid State Sensor.
Micro Nano Characterization Facility,Your One Source for Materials, Device Characterization and Analysis
Invited Talks/Presentations
National Symposium on Nano Science and Technology, IISc
Publication year: 2016
Micro Nano Characterization Facility
Invited Talks/Presentations
Special Training Course in Nanofabrication Technologies for SAARC Countries, CeNSE, IISc, 18th Jan-3rd Feb 2016
Publication year: 2016
Micro and Nano Characterization Facility: Scaling up research in Nano Sciences
Invited Talks/Presentations
Faculty Development Programme on RECENT ADVANCES IN MATERIALS DESIGN AND CHARACTERIZATION (RAMDC-2016) 11 – 13 January 2016
Publication year: 2016
Manufacturing Smart Sensors Systems A Comprehensive Ecosystem of Centralized Facilities at CeNSE
Low Power Energy Harvesting Using Piezo and Wind Energy
Journal paper
Published in International Journal of Advances in Science, Engineering and Technology (IJASEAT) Volume -4, Issue-4, 2016
Publication year: 2016
Abstract—
The project, E-Gen is about harvesting 2 different forms wind and piezoelectric energy and tapping power using different circuitry to obtain particular voltage and current according to the specification and ac to dc conversion using rectifiers to charge a rechargeable battery like a power bank. In our project we have used sensors like MEAS piezo vibration sensors, and stepper motor to harvest energy and miniature ICs which perform functions like rectification, storage of energy, buck control etc. Wind energy from the exhaust is tapped by the blades of the fan which rotates the rotor of the stepper motor thus generating specific amount of power. The AC power generated in each phase of the motor is converted to DC by bridge rectifier circuit. The two phases are connected in parallel to add up the current thus increasing the total power generated which is used to charge the power bank through a voltage regulator which maintains a constant supply voltage thus not causing any damage to the power bank.
Index Terms— Piezo Sensor, Rectification, Faraday Voltage.
Low Power Energy Harvesting Using Piezo and Wind Energy
Conference paperInternational
Published in the proceeding of the International Conference on Electrical, Electronics, Computer Science, Management and Mechanical Engineering (ICE2CSM2E) held at Bengaluru on 21st August 2016.
Publication year: 2016
Image Compression using FPGA & DCT, DWT with MATHLAB
M.Tech/B.Tech Project Reports
Publication year: 2016
Graphical Representation of Real-Time Data from IoT
Journal paper
published in International Journal of innovation and Scientific Research ISSN:2351-8014 Volume 27, Issue 1, October 2016, Pages 229–234
Publication year: 2016
F.E.M. Analysis for Carbon Dioxide Gas Entrapment into Zeolite
Journal paper
International Journal of Engineering Research in Mechanical and Civil Engineering (IJERMCE) Vol 1, Issue 4, August 2016
Publication year: 2016
DIGITAL STETHOSCOPE: ELECTRONIC AUSCULTATION AND PROCESSING
Journal paper
published in International Journal of Engineering Research in Electronics and Communication Engineering (IJERECE) IF- 3.689 Vol 3, Issue 8, August 2016
Publication year: 2016
Design and Implementation of Nanoampere Current measuring device
M.Tech/B.Tech Project Reports
Publication year: 2016
Design and Development of Particulate Matter Counter Product
M.Tech/B.Tech Project Reports
Publication year: 2016
Design and Analysis of TO-8 and TO-16 Polyetheretherketone Sensor Packaging
Conference paperInternational
published in INTERNATIONAL CONFERENCE ON RECENT INNOVATIONS IN ELECTRICAL, ELECTRONICS, COMPUTER, INFORMATION, COMMUNICATION AND MECHANICAL ENGINEERING - ICRIEECICME-2016
Publication year: 2016
CeNSE: An Indian Ecosystem for Indigenization of Advanced Sensor Technologies
Conference paperInternational
Published in The 10th APCOSEC, the annual international conference of the Asia-Pacific Council on Systems Engineering, held in Bangalore, India between 9th and 11th of November, 2016.
Publication year: 2016
Breath-Analysis: A Non Invasive Method For Detection of Diseases and Health Conditions Using Gas Sensors
Conference paperInternational
Published in Proceedings of IRF International Conference, 31stJuly, 2016, Ernakulam, India, ISBN: 978-93-86083-78-4
Publication year: 2016
Auto-calibration of MOS gas sensors based on goodness of fit algorithm
Conference paperInternational
published in IRAJ Proceedings of IRF International Conference, 31stJuly, 2016, Ernakulam, India, ISBN: 978-93-86083-78-4
Publication year: 2016
Artificial Neural Network (ANN) for automated gas sensor calibration
Conference paperInternational
Published in Proceedings of 29th International Conference on Emerging Trends in Engineering and technology International Conference, 24th July, 2016, Bengaluru, India, ISBN: 978-93-86083-69-2
Publication year: 2016
Ultrasonic Fluid Flow measurement using PZT Crystals
M.Tech/B.Tech Project Reports
Publication year: 2015
Real Time measurement of Carbon Dioxide levels at the Periphery of IISc Campus
M.Tech/B.Tech Project Reports
Publication year: 2015
Publications Publications 100% 10 Micro Nano Characterization Facility Your One Source for Materials, Device Characterization and Analysis Screen reader support enabled. Micro Nano Characterization Facility Your One Source for Materials, Device Characterization and Analysis
Invited Talks/Presentations
Familiarization Workshop, 9th October 2015 IIT Patna
Publication year: 2015
MNCF:Your One Source for Materials, Device Characterization and Analysis
MNCF:our One Source for Materials, Device Characterization and Analysis
CeNSE, Sensors to Systems
The aim of this project is to interface a Touchscreen display with
MSP430F5435, a Texas Instruments low power Microcontroller. By doing so
we can integrate touchscreen functionality into the Envirobat. Envirobat is a
low power, low cost air quality monitoring device with attributes like
wireless connectivity for real time data acquisition. The device features can
be controlled effectively using a Touchscreen display which can also output
the sensors’ data. The touchscreen employed here is Multi-Inno,
MI0283QT-11. The touch screen is a TFT (Thin Film Transistor) display
with 43.2 mm × 57.6 mm active area and a resolution of 240 x 320 (RGB).
The display is RoHS compliant.. The touchscreen operates with a
temperature range of -20 to +70 o C.
The MSP has a built in ADC (Analog to Digital value Converter) which
senses the output of the Touchscreen hence to determine the coordinates of
the touch. The output of the touchscreen is a voltage that appears across the
X + and X – terminals (X coordinate) and Y + and Y – terminals (Y coordinate).
SYSTEM INTEGRATION OF SOLID STATE GAS SENSORS FOR PERSONAL AIR MONITORING SYSTEM
M.Tech/B.Tech Project Reports
Publication year: 2014
This project aims at addressing one of the most rampant concerns in today’s world: air pollution. Personal Air Monitoring System is a system involving a 2×2 element metal oxide gas sensor array on a single chip, a current sensor and a microcontroller MSP430F5435. Peripheral components such as SD card, Android devices and Real Time Clock provide user friendly features. This device is a portable model of a pollution monitoring system. The system is built such that it provides the user with ppm values of hazardous gases present in the atmosphere at periodic intervals, hence monitoring the surroundings he is in.
System Engineering and Deployment of Envirobat An Urban Air Pollution Monitoring Device
Conference paperInternational
2014 IEEE International Conference on Electronics, Computing and Communication Technologies (IEEE CONECCT) organized by IEEE Bangalore Section held at Indian Institute of Science, Bangalore, India during 6-7 Jan 2014
Publication year: 2014
System Engineering and Deployment of Envirobat An Urban Air Pollution Monitoring Device
Conference paper
2014 IEEE International Conference on Electronics, Computing and Communication Technologies (IEEE CONECCT) organized by IEEE Bangalore Section held at Indian Institute of Science, Bangalore, India during 6-7 Jan 2014
Publication year: 2014
SINGLE AXIS SOLAR TRACKER WITH MODIFIED PSO-MPPT ALGORITHM
M.Tech/B.Tech Project Reports
Publication year: 2014
The project aims at maximizing the harnessing capability of a solar panel with
the help of a single axis automatic solar tracker in tandem with a charge
controller with Maximum Power Point Tracking (MPPT) capability. The solar
panel, in the course of its movement from east to west may encounter a
situation wherein the panel is partially shaded. This not only leads to a drop in
its efficiency, but also lowers the operation life of the system. In order to ensure
that the panel operates efficiently even under partial shade, the MPPT algorithm
of the charge controller is incorporated with a modified Particle Swarm
Optimization (PSO) technique. Thus, the load receives maximum power during
the day, irrespective of the insolation conditions.
Readout and functional electronics for Intracranial pressure(ICP) sensor
M.Tech/B.Tech Project Reports
Publication year: 2014
Intracranial Pressure (ICP) is the combination of the pressure exerted by the brain tissue,
blood, and cerebral spinal fluid (CSF). Piezoresistive based pressure sensors have been
extensively used in biomedical applications for pressure measurements. In this application of
ICP measurement, MEMS based catheter tip type piezoresistive sensors are used and are
inserted inside (Invasive measurements) the brain.
This work involves electrical characterization of intracranial pressure(ICP) sensor developed at
CeNSE, IISC and its comparison with a commercially available similar sensor. The sensitivity
of these sensors are measured and analysed for different configuration of associated network
bridge. Using commercially available similar sensor available in the market we have proposed
a new idea for intra-cranial pressure(ICP) monitoring in the cranial vault, along with the
temperature. First part consists of our new proposed model for ICP monitoring along with
temperature. In the second part we have tried to emulate our new proposed model using
commercially available sensor for different pressure as well as temperature values. Finally
MSP430 microcontroller is programmed to extract sensor output to display it on the output
devices.
Readout and Functional Electronics for Intracranial Pressure (ICP) Sensor
Conference paperInternational
2nd International Conference on Current Trends in Engineering and Management (ICCTEM-2014), 17-19 July 2014,
Publication year: 2014
RASPBERRY PI INTERFACING WITH TOUCH SCREEN AND ANALOG TO DIGITAL CONVERTER
M.Tech/B.Tech Project Reports
Publication year: 2014
Infrared Touch Sensing Module For Touchless Displays
M.Tech/B.Tech Project Reports
Publication year: 2014
FPGA BASED SYSTEM DEVELOPMENT FOR INDOOR AIR QUALITY MONITORING
M.Tech/B.Tech Project Reports
Publication year: 2014
ABSTRACT
A novel approach to the design of data acquisition system for process applications is presented in this project. The core heart of the proposed system is Field Programmable Gate Array (FPGA) which is configured and programmed to acquire a maximum of 16 MB real time data. For the real time validation of the designed system, a process plant with three parameters i.e. pressure, temperature and level is considered. Real time data from the process is acquired using suitable temperature, pressure and level sensors. Signal conditioners are designed for each sensor and are tested in real time. Designed FPGA based data acquisition system along with corresponding signal conditioners is validated in real-time by running the process and comparing the same with the corresponding references. The data acquired in real time compares well with the references.
The ever increasing demand for wireless sensor networks in many different places is causing a growing demand for low cost energy efficient sensors for monitoring physical variables such as temperature, pressure or gas concentration. This project presents a conditioning system for low-cost non-dispersive infrared gas sensors used to measure the co2 concentration in an open air environment. It mainly consists of amplification and filtering circuit that adapts the small and noisy signal provided by the sensor to a signal which can be easily read by a low-power Nexys 2 Spartan 3E FPGA board. Along with co2 sensor temperature and humidity sensors are used to provide current temperature and humidity level.
Keywords: FPGA, Indoor air quality monitoring , Sensors.
FPGA Based System Development for Indoor Air Quality Monitoring
Conference paperNational
FPGA Based System Development for Indoor Air Quality Monitoring
Publication year: 2014
Development Of Read Out Electronics For Fluid Flow Measurements
M.Tech/B.Tech Project Reports
Publication year: 2014
Abstract—This paper presents work involved in modeling and experimentation of transit-time ultrasonic flow meter using piezo-transducers and displaying the results on LCD and also alarming the doctors in case of emergency.Theproposed method calculates the flow rate usingdifferent configurations andhence selects the appropriate calculation method for various test conditions. The Transit-time flow-meter measures the frequency shifts caused by the liquid flow, using a pair of transducers. In our configuration the sound waves are made to travel between piezo-sensors. The speed of the signal traveling between the transducers increases or decreases with the direction of transmission and the velocity of the liquid being measured. For the flow measurement ultrasonic signals are sent across the interior of the pipe (tube) at an angle, one with the direction of the flow and one against the flow. The difference in the transit time of the two waves or synchronized signals is used to calculate the flow velocity.
Keywords—Transit time , piezo-transducer, Time difference method, Frequency difference method, Fluid flow.
Development and Modeling of Ultrasonic Fluid Flow Measurement system based Transit-Time
M.Tech/B.Tech Project Reports
Publication year: 2014
Development And Modeling of Ultrasonic Fluid Flow Measurement System Based on Transit-Time
M.Tech/B.Tech Project Reports
Publication year: 2014
Ultrasonic flow meters are one of the fastest growing technologies within the general
field of instruments for process monitoring, control, and measurement. Transit-time method
is based on the theory that when ultrasonic pulse propagates through the flowing medium,
its propagation time will vary with the flow velocity of liquid medium.
The ultrasonic flow meter is a non-invasive liquid flow measurement device that
emits ultrasonic signals into the flow path. This flow meter measures the velocity
of fluid with ultrasound to calculate volume flow Using ultrasonic transducers.
Exterior installation eliminates pressure losses and prevents leaking that can be
associated with in-line meter installations. In this flow meter two ultrasonic signals are sent
across the interior of the pipe (tube) at an angle, one with the direction of the flow and one
against the flow. The difference in the transit time of the two waves or synchronized signals
is used to calculate the flow velocity.
The aim of the project is to Develop an embedded interface for a Transit time flow
meter at low power consumption. The primary goal is to make the ultrasonic flow meter
easier to use and get the flow rate-information in real-time.
This project is basically designed to measure volumetric flow in fluid flow
measurement in tubes and pipes for industrial application and Medical applications. We
propose various methods to calculate the flow measurement using Transit-time under
different test conditions to calculate measure the blood flow in veins/ arteries during
Neurosurgeries.
Development and Modeling of Ultrasonic Fluid Flow Measurement System Based on Transit-Time
Conference paperInternational
7th Institute of Smart Structures and Systems (ISSS) Conference 2014 held at IISc, Bangalore 8-11 July 2014
Publication year: 2014
Development and Modeling of Ultrasonic Fluid Flow Measurement System Based on Transit-Time
Conference paperInternational
7th Institute of Smart Structures and Systems (ISSS) Conference 2014 held at IISc, Bangalore 8-11 July 2014
Publication year: 2014
CoNe Lab Administration and Software License Management System
M.Tech/B.Tech Project Reports
Publication year: 2014
A Rectifier-Free Piezoelectric Energy Harvesting Circuit
M.Tech/B.Tech Project Reports
Publication year: 2014
Abstract
An optically intelligent image sensing device is provided. By applying different potentials across different electrode sections in the image sensing device, the electric field profiles of the corresponding liquid crystal layer sections bend the lights passing through the liquid crystal layer sections in a predetermined manner. In one embodiment, all of a certain color light entering the image sensing device can be bent towards a color filter for the specific color, thereby entering the light sensor for the specific color light. Accordingly, the optically intelligent image sensing device has improved optical efficiency. An arrangement for an array of different electrode and light sensing sections in the image sensing device is also provided as an example for how each electrode may be connected to the optically intelligent image sensing device control signals. An example using the present optically intelligent image sensing device to improve the optical efficiency of an image capturing device is also described.
Abstract
An optically intelligent image sensing device is provided. By applying different potentials across different electrode sections in the image sensing device, the electric field profiles of the corresponding liquid crystal layer sections bend the lights passing through the liquid crystal layer sections in a predetermined manner. In one embodiment, all of a certain color light entering the image sensing device can be bent towards a color filter for the specific color, thereby entering the light sensor for the specific color light. Accordingly, the optically intelligent image sensing device has improved optical efficiency. An arrangement for an array of different electrode and light sensing sections in the image sensing device is also provided as an example for how each electrode may be connected to the optically intelligent image sensing device control signals. An example using the present optically intelligent image sensing device to improve the optical efficiency of an image capturing device is also described.
OPTICALLY INTELLIGENT IMAGE SENSING DEVICE
An optically intelligent image sensing device is provided. By applying different potentials across different electrode sections in the image sensing device, the electric field profiles of the corresponding liquid crystal layer sections bend the lights passing through the liquid crystal layer sections in a predetermined manner. In one embodiment, all of a certain color light entering the image sensing device can be bent towards a color filter for the specific color, thereby entering the light sensor for the specific color light. Accordingly, the optically intelligent image sensing device has improved optical efficiency. An arrangement for an array of different electrode and light sensing sections in the image sensing device is also provided as an example for how each electrode may be connected to the optically intelligent image sensing device control signals. An example using the present optically intelligent image sensing device to improve the optical efficiency of an image capturing device is also described.
Development of an Embedded Technology Tool for Seismological studies using MEMS devices
M.Tech/B.Tech Project Reports
Publication year: 2013
Micro and Nano Characterization Facility: Operations Methodology and Technical Management
Conference paperInternational
Published in international conference :2012 19th Biennial University/Government/Industry, Micro/Nano Symposium (UGIM)
Publication year: 2012
MEMS/NEMS Device Characterization: Tools and Methods
Conference paperNational
AMEET -2012 held at Sultanpur, UP, April 07-08, 2012
Publication year: 2012
Development and Modeling of Ultrasonic Fluid Flow Measurement System Based on Transit-Time
Conference paperNational
AMEET -2012 held at Sultanpur, UP, April 07-08, 2012
Publication year: 2012
77 K MOSFET Modeling
Reports
Progress Report submitted to Solid State Physics Lab (SSPL), Delhi, July 2011
Publication year: 2011
Intensified Nanoelectronics Education in India
Indian Nanoelectronics Users Program: An Outreach Vehicle to Expedite Nanoelectronics Research in India
Conference paperInternational
The proceedings of the International Conference on Computers, Communications and Devices, 2000
Publication year: 2010
Emerging Opportunities for Nanoelectronics R & D in India
Journal paper
Nano Digest, pages 14- 15, Volume No: 1, Issue - 4 September' 2009
Publication year: 2009
Process optimazation of fabrication process for UV sensitive CCDs
CMS Physics Technical Design Report: Addendum on High Density QCD with Heavy Ions
Abstract
This report presents the capabilities of the CMS experiment to explore the rich heavy-ion physics programme offered by the CERN Large Hadron Collider (LHC). The collisions of lead nuclei at energies √ sN N = 5.5 TeV, will probe quark and gluon matter at unprecedented values of energy density. The prime goal of this research is to study the fundamental theory of the strong interaction — Quantum Chromodynamics (QCD) — in extreme conditions of temperature, density and parton momentum fraction (low-x). This report covers in detail the potential of CMS to carry out a series of representative Pb-Pb measurements. These include “bulk” observables, (charged hadron multiplicity, low pT inclusive hadron identified spectra and elliptic flow) which provide information on the collective properties of the system, as well as perturbative probes such as quarkonia, heavy-quarks, jets and high pT hadrons which yield “tomographic” information of the hottest and densest phases of the reaction.
CMS Physics Technical Design Report, Volume II: Physics Performance
Journal paper
Journal of Physics G Nuclear and Particle Physics 34:995 · January 2007
Publication year: 2007
CMS Physics Technical Design Report, Volume II: Physics Performance
Journal paper
Publication year: 2007
Abstract
CMS is a general purpose experiment, designed to study the physics of pp
collisions at 14 TeV at the Large Hadron Collider (LHC). It currently involves
more than 2000 physicists from more than 150 institutes and 37 countries. The
LHC will provide extraordinary opportunities for particle physics based on
its unprecedented collision energy and luminosity when it begins operation in
2007.
The principal aim of this report is to present the strategy of CMS to explore
the rich physics programme offered by the LHC. This volume demonstrates
the physics capability of the CMS experiment. The prime goals of CMS are to
explore physics at the TeV scale and to study the mechanism of electroweak
symmetry breaking—through the discovery of the Higgs particle or otherwise.
To carry out this task, CMS must be prepared to search for new particles,
such as the Higgs boson or supersymmetric partners of the Standard Model
particles, from the start-up of the LHC since new physics at the TeV scale may
manifest itself with modest data samples of the order of a few fb −1 or less.
The analysis tools that have been developed are applied to study in great
detail and with all the methodology of performing an analysis on CMS data
specific benchmark processes upon which to gauge the performance of CMS.
These processes cover several Higgs boson decay channels, the production and
decay of new particles such as Z 0 and supersymmetric particles, B s production
and processes in heavy ion collisions. The simulation of these benchmark
processes includes subtle effects such as possible detector miscalibration and
misalignment. Besides these benchmark processes, the physics reach of CMS
is studied for a large number of signatures arising in the Standard Model
and also in theories beyond the Standard Model for integrated luminosities
ranging from 1 fb −1 to 30 fb −1 . The Standard Model processes include QCD,
B-physics, diffraction, detailed studies of the top quark properties, and
electroweak physics topics such as the W and Z 0 boson properties. The
production and decay of the Higgs particle is studied for many observable
decays, and the precision with which the Higgs boson properties can be
derived is determined. About ten different supersymmetry benchmark points
are analysed using full simulation. The CMS discovery reach is evaluated
in the SUSY parameter space covering a large variety of decay signatures.
0954-3899/07/060995+585$30.00
© 2007 IOP Publishing Ltd
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995996
CMS Collaboration
Furthermore, the discovery reach for a plethora of alternative models for new
physics is explored, notably extra dimensions, new vector boson high mass
states, little Higgs models, technicolour and others. Methods to discriminate
between models have been investigated.
This report is organized as follows. Chapter 1, the Introduction, describes
the context of this document. Chapters 2–6 describe examples of full analyses,
with photons, electrons, muons, jets, missing E T , B-mesons and τ ’s, and for
quarkonia in heavy ion collisions. Chapters 7–15 describe the physics reach
for Standard Model processes, Higgs discovery and searches for new physics
beyond the Standard Model
CMS Physics Technical Design Report Addendum on High Density QCD with Heavy Ions
CMS Expression of Interest in the SLHC
Device design and process optimization for development of EMCCDs
CMS Physics Technical Design Report Volume I: Detector Performance and Software
Journal paper
CMS Physics Technical Design Report Volume I: Detector Performance and Software
Publication year: 2006
CMS Physics Technical Design Report Volume I: Detector Performance and Software
Journal paper
Publication year: 2006
X-Ray Sensors with Integrated Front-end Electronics
Conference paperNational
IITB-FAN National symposium on Nanotechnology at IIT, Bombay January 2005.
Publication year: 2005
Silicon drift detectors with integrated JFET: Simulation and design
Journal paper
IndianJournal of Pure & Applied Physics Vol.43, September 2005, pp. 705-713
Publication year: 2005
ABSTRACT:
High resolution, lew energy X-ray spectroscopy systems have been developed recently using the Silicon drift detector
(SDD) with in-built Junction field effect transistor (JFET). A comprehensive simulation study of the SDD and integrated JFET with a view to formulate the design flow has been carried out. An optimized process flow for fabricaticn of SDD and integrated JFET on high resistivity detector substrate is presented. Based on these studies, several mask layouts for the SDD, JFET and reset MOSFET have been designed.
Keywords:
Silicon drift detectors, MOSFET, Junction field effect transistor, X-ray spectroscopy
Silicon Drift Detector: Device Design & Mask Layout
Conference paperNational
IITB-FAN National symposium on Nanotechnology at IIT, Bombay January 2005.
Publication year: 2005
Silicon Drift Detector with Integrated JFET: Simulation & Design
Journal paper
Indian Journal of Pure and Applied Physics: Indian Journal of pure and applied physics, volume 43, September 2005, pg 705-713
Publication year: 2005
Development of Thin-Film-Coated High Efficiency Silicon Neutron Sensors
Conference paperNational
IITB-FAN National symposium on Nanotechnology held at IIT, Bombay January 2005
Publication year: 2005
Development of Silicon Drift Detector and Low noise JFETs for Low energy X-ray spectroscopy system
Conference paperNational
IITB-FAN National symposium on Nanotechnology held at IIT, Bombay, January 2005
Publication year: 2005
Development of Silicon Detectors for High Resolution Spectroscopy Systems: A Technological Perspective
Conference paperNational
National Symposium on Compact Nuclear Instrumentation and Radiation Detectors to be held at Defense Lab Jodhpur, INDIA March 2-4, 2005
Publication year: 2005
Development of Semiconductor DeltaE-E detector chip using standard Bipolar IC Technology
Conference paperNational
National Symposium on Compact Nuclear Instrumentation and Radiation Detectors to be held at Defense Lab Jodhpur, INDIA March 2-4, 2005
Publication year: 2005
Technology Development for Fabrication of Large Area Silicon Strip Detector under BARC-BEL Collaboration
Studies on Reducing Leakage Current and Improving Breakdown Voltage of Large-Area Silicon Detectors: Technology and Results
Journal paper
Nuclear Instruments and Methods in Physics Research A 527 (2004) 308–318
Publication year: 2004
Abstract
6×6 cm2 single-sided p+–i–n+ silicon strip detectors have been fabricated with the standard IC fabrication planar technology. Various processing techniques have been used to reduce the leakage current of the detectors and their results are presented. Different gettering processes have been implemented to remove the impurities and defects from the detector active regions. The combined approach of employing intrinsic as well as extrinsic gettering gives the best result. Incorporating special design techniques and unique back plane ohmic side processing technology has ensured stable high-voltage operation of detectors without breakdown. The special design and processing techniques have produced detectors with typical reverse bias current densities of approximately 2 nA cm−2 at VFD+150 V and breakdown voltage greater than 500 V. These technological studies have been carried out for producing silicon detectors to be mounted in Preshower detector of CMS experiment at CERN.
Simulation Studies for the Integration of P-MOSFET with NJFET on High Resistivity Silicon for Continuous Reset Purpose
Conference paperNational
National Symposium on Nuclear Instrumentation, 2004, India, p. 433
Publication year: 2004
Silicon Strip Detector Development under India-CMS Collaboration
Conference paperNational
National Symposium on Nuclear Instrumentation, 2004, India,
Publication year: 2004
Process and Device Simulation Studies for Silicon Detector Development under BARC-BEL collaboration
Performance Tests and Radiation Damage Studies of Silicon Detectors Developed Under BARC-BEL Collaboration
Electrical and Technological Parameters of Silicon Detectors Developed under BARC-BEL Collaboration
Development of Technology at BEL for 32-channel silicon strip detectors and diode detectors
Conference paperNational
National Symposium on Nuclear Instrumentation, 2004, India, p. 24.
Publication year: 2004
Development of Silicon Radiation Detectors for Applications in High Radiation Environment
Development of Silicon Drift Detectors with Integrated Front End Electronics, Design Basis Report
Design Basis Report on the Development of Silicon Drift Detector with Integrated Front End Electronics
Automated & multichannel characterization systems for silicon strip Detectors
Conference paperNational
National Symposium on Nuclear Instrumentation, 2004, India,
Publication year: 2004
A silicon detector based compact system for low energy counting applications
Conference paperNational
National Symposium on Nuclear Instrumentation, 2004, India, p. 24.
Publication year: 2004
2D- Device Simulation Studies of Silicon Drift Detector
Conference paperNational
National Symposium on Nuclear Instrumentation, 2004, India, p. 438
Publication year: 2004
Development and Study of Silicon Detectors
Conference paperNational
Symposium on Nuclear Physics held at BARC, India in December, 2003, Volume 46B (2003), p. 604
Publication year: 2003
A low noise hybrid Preamplifier for Nuclear Spectroscopy applications
Conference paperNational
NSRP-15 ( National Symposium on Radiation Physics-15) held at BARC, India, November, 2003.
Publication year: 2003
Performance of silicon strip detector with delay line read-out
Conference paperNational
Performance of silicon strip detector with delay line read-out
Publication year: 2002
Role of guard rings in improving performance of silicon detectors
Abstract
BARC has developed large-area silicon detectors in collaboration with BEL to be used in the pre-shower detector of the CMS experiment at CERN. The use of floating guard rings (FGR) in improving breakdown voltage and reducing leakage current of silicon detectors is well-known. In the present work, it has been demonstrated that FGRs can also be used to improve the spectroscopic response of silicon detectors. The results have been confirmed by carrying out α-particle (≈5 MeV) and γ-ray (60 keV) spectroscopies with the FGR floating or biased and the underlying physics aspect behind the change in spectra is explained. Although reduction in leakage current after biasing one of the guard rings has been reported earlier, the role of a guard ring in improving the spectroscopic response is reported for the first time. Results of TCAD simulations for silicon detectors with the guard ring under different biasing conditions have been presented. Low yield in producing large-area silicon detectors makes them very costly. However, with one of the FGRs biased even a detector having large surface leakage current can be used to give the same response as a very good detector. This makes the use of large-area silicon detectors very economical as the yield would be very high (>90%).
Keywords
Silicon detectors; floating guard ring; leakage current.
Development of Silicon Radiation Detectors for Applications in High Radiation Environment
Conference paperInternational
International Workshop on Physics of Semiconductor Devices, 2001 held at IITD
Publication year: 2001
Electrical and radiation performance of silicon diode detectors fabricated at BEL, Bangalore
Conference paperInternational
the proceedings of the International Conference on Computers, Communications and Devices, 2000
Publication year: 2000